Conference proceeding
On optical gain mechanisms in a 2DEG photodetector
Proceedings of the 2001 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference. (Cat. No.01TH8568), v 1, pp 57-60
2001
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Abstract
Discusses the gain mechanisms in an optical detector based on a modulation doped heterojunction. It is shown that, in this gate-less HEMT device, varying the density of the mobile electron gas produces large differences in optical responsivity. The observed behavior is explained on the basis of a internal variation of the Fermi level, similar to a photovoltaic gating effect.
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Details
- Title
- On optical gain mechanisms in a 2DEG photodetector
- Creators
- B Nabet - Drexel UniversityM.A RomeroA ColaF QuarantaM Cesareo
- Publication Details
- Proceedings of the 2001 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference. (Cat. No.01TH8568), v 1, pp 57-60
- Conference
- 2001 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference
- Publisher
- IEEE
- Number of pages
- 1
- Resource Type
- Conference proceeding
- Language
- English
- Academic Unit
- Electrical and Computer Engineering
- Web of Science ID
- WOS:000177851000013
- Other Identifier
- 991019168753604721
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InCites Highlights
Data related to this publication, from InCites Benchmarking & Analytics tool:
- Web of Science research areas
- Engineering, Electrical & Electronic
- Optics
- Physics, Applied