Conference proceeding
Optically activated pin diode switch
IEEE Conference Record of the 1988 Eighteenth Power Modulator Symposium, pp 223-226
1988
Abstract
The authors discuss the design, fabrication, and application of optically activated switches. A 0.25 m-thick Si pin diode, 3.0 mm in diameter, was tested using an 808 nm 2-D diode laser array measuring about 2 mm*5 mm as an optical source. Preliminary testing of the diode has demonstrated a holding voltage of 1000 V and a conduction of 10 A upon activation with 200 W of optical power (the pulse width was 10 mu s). The same device, while being pulsed-biased to 2.0 kV, has demonstrated 20 A pulses (100 ns pulse width) with less than 10 ns risetime. The laser peak power was 500 W.< >
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Details
- Title
- Optically activated pin diode switch
- Creators
- A Rosen - Sarnoff CorporationP Srabile - Sarnoff CorporationW Janton - Sarnoff CorporationA Gombar - Sarnoff CorporationJ McShea - GE AviationR.A Buckingham - GE AviationA Rosenberg - GE AviationP Herczfeld - Drexel UniversityA Bahasadri - Drexel University
- Publication Details
- IEEE Conference Record of the 1988 Eighteenth Power Modulator Symposium, pp 223-226
- Conference
- IEEE 1988 Eighteenth Power Modulator Symposium
- Publisher
- IEEE
- Number of pages
- 1
- Resource Type
- Conference proceeding
- Language
- English
- Academic Unit
- [Retired Faculty]; Pathology (and Laboratory Medicine)
- Other Identifier
- 991019182761104721