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Phase Transformations in Semiconductors Under Contact Loading
Conference proceeding

Phase Transformations in Semiconductors Under Contact Loading

Yury Gogotsi, Michael S Rosenberg, Andreas Kailer and Klaus G Nickel
Tribology Issues and Opportunities in MEMS, pp 431-442
1998
DOI: https://doi.org/10.1007/978-94-011-5050-7_30

Abstract

Raman Spectrum Metastable Phasis Ductile Regime Phase Transformation Contact Loading
Phase transformations occurring in materials under contact loading are important for a wide range of problems in materials science and engineering. We studied solid-state phase transformation, including metallization and amorphization of semiconductors under high non-hydrostatic pressures using a combination of hardness indentation tests, scratch tests, Raman spectroscopy, FTIR and various microscopic techniques. Our experiments demonstrated metallization due to closing of the band gap and consequent formation of metastable phases upon decompression in silicon, germanium and several other semiconductors. For the first time high-pressure, these phases were unambiguously observed in hardness impressions, scratches and machining debris, and for some of these phases Raman spectra have not been published before. The data obtained confirm that the hardness level of many semiconductors depends on the stress (deformation) needed to initiate the transformation. It may help to choose and/or optimize conditions of ductile-regime machining of semiconductors, as well as give new insights into their surface properties. Information on the phase transformations in the surface layer of materials resulting from contact interactions is important for understanding the mechanisms of wear, friction and erosion.

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