Conference proceeding
Polarization study of the p(1×1)‐ and p(1×2)‐phases of Bi/GaSb(110) using linearly polarized synchrotron radiation
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, v 11(4), pp 1486-1491
Jul 1993
Abstract
The polarization dependence of the surface state bands of the ordered p(1×1)‐ and p(1×2)‐phases of Bi/GaSb(110) at monolayer coverages has been studied with the technique of angle‐resolved ultraviolet photoemission spectroscopy. Four new Bi‐induced surface state bands (S
’, S
‘, S‴, and S
IV) have been observed. The polarization dependence of these states have been probed at the high symmetry points of the surface Brillouin zone and compared with the polarization dependence of corresponding surface state bands of other group‐V semimetals on III–V(110) compound semiconductors. For the (1×1)‐phase, the states S
‘, S‴, and S
IV all exhibited p
z
‐like dependence at all of the high symmetry points. The polarization dependence of S
’ was observed to evolve from p
xy
‐like at the X̄’ point of the surface Brillouin zone to p
z
‐like character at the other high symmetry points. The polarization dependence of S
‘, S‴, and S
IV were relatively unaffected by the phase transition of the overlayer from the (1×1)‐phase to the (1×2)‐phase.
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Details
- Title
- Polarization study of the p(1×1)‐ and p(1×2)‐phases of Bi/GaSb(110) using linearly polarized synchrotron radiation
- Creators
- D. N. McIlroy - Department of Physics, University of Rhode Island, Kingston, Rhode Island 02881D. Heskett - Department of Physics, University of Rhode Island, Kingston, Rhode Island 02881A. B. McLean - Department of Physics, Queen’s University, Kingston, Ontario K7L 3N6, CanadaR. Ludeke - IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598H. Munekata - IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598N. J. DiNardo - Drexel University
- Publication Details
- Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, v 11(4), pp 1486-1491
- Conference
- 20th annual conference on the physics and chemistry of semiconductor interfaces, 20th
- Number of pages
- 6
- Resource Type
- Conference proceeding
- Language
- English
- Academic Unit
- Physics
- Web of Science ID
- WOS:A1993LT45000047
- Other Identifier
- 991019183990404721
InCites Highlights
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- Collaboration types
- Industry collaboration
- Domestic collaboration
- International collaboration
- Web of Science research areas
- Engineering, Electrical & Electronic
- Nanoscience & Nanotechnology
- Physics, Applied