Conference proceeding
Polycrystalline GaAs solar cells on low-cost Silicon-Film{trademark} substrates
CONFERENCE RECORD OF THE TWENTY SIXTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 1997, pp 511-514
31 Dec 1997
Abstract
The authors assess the potential of a low-cost, large-area Silicon-Film{trademark} sheet as a substrate for thin-film polycrystalline GaAs solar cells. Silicon-Film is a relatively inexpensive material on which large-grain (>2 mm) polycrystalline GaAs films can be formed. The GaAs epitaxial layers are grown by a simple close-spaced vapor transport (CSVT) technique using water vapor as a transport agent. A recrystallized Ge{sub 1{minus}x}Si{sub x} buffer layer between the GaAs epilayer and Silicon-Film substrate can facilitate growth of the GaAs. Selective epitaxy on patterned, oxide-masked substrates is effective in reducing thermal stress effects.
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Details
- Title
- Polycrystalline GaAs solar cells on low-cost Silicon-Film{trademark} substrates
- Creators
- M.G. Mauk - AstroPower Inc., Newark, DE, USAB.W. FeyockR.B. HallK.D. CavanaughJ.E. Cotter - AstroPower, Inc., Newark, DE (United States)IEEE
- Publication Details
- CONFERENCE RECORD OF THE TWENTY SIXTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 1997, pp 511-514
- Publisher
- Institute of Electrical and Electronics Engineers, Inc., Piscataway, NJ (United States)
- Resource Type
- Conference proceeding
- Language
- English
- Academic Unit
- Engineering Technology
- Web of Science ID
- WOS:000072313700124
- Other Identifier
- 991020623757004721
InCites Highlights
Data related to this publication, from InCites Benchmarking & Analytics tool:
- Web of Science research areas
- Energy & Fuels
- Engineering, Electrical & Electronic
- Materials Science, Ceramics
- Materials Science, Coatings & Films
- Materials Science, Multidisciplinary
- Optics