Conference proceeding
Predicting Open-Circuit Voltages in Atomically-Thin Monolayer Transition Metal Dichalcogenides-Based Solar Cells
2019 IEEE 46th Photovoltaic Specialists Conference (PVSC), pp 0768-0771
Jun 2019
Featured in Collection : UN Sustainable Development Goals @ Drexel
Abstract
We present an approach to quantify upper limits of open circuit voltages (V oc ) that can possibly be achieved from monolayer transition metal dichalcogenides (TMDs) WS 2 , MoS 2 , WSe 2 , and MoSe 2 -based solar cells, and compare them with state-of-the-art perovskite materials. Spectrally-resolved micro-photoluminescence (μ-PL) and absorption measurements were utilized in the generalised Planck law of emissions to derive quasi-Fermi level splitting values (Δμ) of these monolayers under illumination. The value of Δμ of a certain material represents the highest possible open-circuit voltage of a solar cell fabricated from that material. From our analysis, values close to ~1.4, ~1.12, ~1.06 and ~0.93 V could be potentially achieved from WS 2 , MoS 2 , WSe 2 , and MoSe 2 monolayers-based solar cells under 1-sun illumination. The results reveal the potential of atomically-thin TMDs for high-voltage, ultra-light, flexible, and transparent photovoltaics.
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Details
- Title
- Predicting Open-Circuit Voltages in Atomically-Thin Monolayer Transition Metal Dichalcogenides-Based Solar Cells
- Creators
- Mike Tebyetekerwa - Australian National UniversityDaniel Macdonald - Australian National UniversityHieu T Nguyen - Australian National UniversityIEEE
- Publication Details
- 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC), pp 0768-0771
- Publisher
- IEEE
- Resource Type
- Conference proceeding
- Language
- English
- Academic Unit
- School of Biomedical Engineering, Science, and Health Systems
- Web of Science ID
- WOS:000542034900158
- Scopus ID
- 2-s2.0-85081549112
- Other Identifier
- 991019320712204721
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- Web of Science research areas
- Energy & Fuels
- Engineering, Electrical & Electronic