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Predicting Open-Circuit Voltages in Atomically-Thin Monolayer Transition Metal Dichalcogenides-Based Solar Cells
Conference proceeding

Predicting Open-Circuit Voltages in Atomically-Thin Monolayer Transition Metal Dichalcogenides-Based Solar Cells

Mike Tebyetekerwa, Daniel Macdonald, Hieu T Nguyen and IEEE
2019 IEEE 46th Photovoltaic Specialists Conference (PVSC), pp 0768-0771
Jun 2019

Abstract

open-circuit voltage photoluminescence photovoltaic cells quasi-Fermi level splitting transition metal dichalcogenides two-dimensional materials
We present an approach to quantify upper limits of open circuit voltages (V oc ) that can possibly be achieved from monolayer transition metal dichalcogenides (TMDs) WS 2 , MoS 2 , WSe 2 , and MoSe 2 -based solar cells, and compare them with state-of-the-art perovskite materials. Spectrally-resolved micro-photoluminescence (μ-PL) and absorption measurements were utilized in the generalised Planck law of emissions to derive quasi-Fermi level splitting values (Δμ) of these monolayers under illumination. The value of Δμ of a certain material represents the highest possible open-circuit voltage of a solar cell fabricated from that material. From our analysis, values close to ~1.4, ~1.12, ~1.06 and ~0.93 V could be potentially achieved from WS 2 , MoS 2 , WSe 2 , and MoSe 2 monolayers-based solar cells under 1-sun illumination. The results reveal the potential of atomically-thin TMDs for high-voltage, ultra-light, flexible, and transparent photovoltaics.

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Energy & Fuels
Engineering, Electrical & Electronic
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