Conference proceeding
Pressure-induced phase transformations in semiconductors under contact loading
FRONTIERS OF HIGH PRESSURE RESEARCH II: APPLICATION OF HIGH PRESSURE TO LOW-DIMENSIONAL NOVEL ELECTRONIC MATERIALS, Vol.48
NATO SCIENCE SERIES, SERIES II: MATHEMATICS, PHYSICS AND CHEMISTRY
01 Jan 2001
Featured in Collection : UN Sustainable Development Goals @ Drexel
Abstract
A combination of indentation testing and Raman microspectroscopy was used to study phase transformations in semiconductors under contact loading. Metastable high-pressure phases were observed in the nanoindents on Si and Ge, suggesting indentation-induced transformation to a metallic phase. GaAs was shown to deform by plastic flow at room temperature. The peculiarities in the indentation load-displacement behavior of Si ("pop-out" events) were assigned to a phase transformation upon pressure release, Raman imaging was successfully used to visualize phase distributions and stress fields around the hardness imprints on Si. Possible applications of the proposed technique are in the area of mechanical surface nanomachining of semiconductors, and selective 2D surface patterning with amorphous material or metastable high-pressure phases having attractive electronic properties.
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Details
- Title
- Pressure-induced phase transformations in semiconductors under contact loading
- Creators
- DomnichY Gogotsi
- Contributors
- H D Hochheimer (Editor)B Kuchta (Editor)P K Dorhout (Editor)J L Yarger (Editor)
- Publication Details
- FRONTIERS OF HIGH PRESSURE RESEARCH II: APPLICATION OF HIGH PRESSURE TO LOW-DIMENSIONAL NOVEL ELECTRONIC MATERIALS, Vol.48
- Series
- NATO SCIENCE SERIES, SERIES II: MATHEMATICS, PHYSICS AND CHEMISTRY
- Publisher
- Springer Nature
- Number of pages
- 12
- Resource Type
- Conference proceeding
- Language
- English
- Academic Unit
- Materials Science and Engineering
- Identifiers
- 991019170366404721
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- Web of Science research areas
- Chemistry, Physical
- Physics, Condensed Matter