Conference proceeding
Proton Bombarded Gallium Arsenide: Opto-Electronic Effects
Advanced processing and characterization of semiconductors III : 22-24 January 1986, Los Angeles, California, v 623, pp 144-148
26 Jun 1986
Abstract
Proton bombardment of doped gallium arsenide is known to produce electrical compensation and optical changes within the implanted material. In semi-conductor processing this technique has found wide application ranging from electrical device isolation to laser fabrication. This paper addresses recent advances in this technology with emphasis on opto-electronic developments. Components and devices formed through this process are reviewed as well as the optical and electrical properties of the bombarded material.
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3 citations in Scopus
Details
- Title
- Proton Bombarded Gallium Arsenide: Opto-Electronic Effects
- Creators
- J. M Zavada - United States Department of the ArmyH. A Jenkinson - United States Army Armament Research, Development and Engineering CenterD. C Larson - Drexel University
- Publication Details
- Advanced processing and characterization of semiconductors III : 22-24 January 1986, Los Angeles, California, v 623, pp 144-148
- Conference
- Advanced processing and characterization of semiconductors III, 3rd (Los Angeles, California, United States, 22 Jan 1986–24 Jan 1986)
- Publisher
- SPIE
- Resource Type
- Conference proceeding
- Language
- English
- Academic Unit
- [Retired Faculty]
- Scopus ID
- 2-s2.0-0022901481
- Other Identifier
- 991019173952304721