Conference proceeding
Resonant cavity LEDs by lateral epitaxy
Proceedings of SPIE, v 3002(1), pp 59-66
04 Apr 1997
Abstract
Optical cavity light-emitting diode structures with 'buried' mirrors, and their fabrication by lateral epitaxy are described. Single-crystal, high-quality epitaxial layers are formed over substrates coated with patterned, reflective masks using liquid-phase or vapor-phase epitaxial lateral overgrowth processes. The reflecting mask acts as a backside mirror and forms an optical cavity leading to enhanced external quantum efficiencies. An AlGaAs optical cavity LED incorporating a refractory metal 'buried' mirror is assessed: a greater than 3-fold increase in output optical power is measured compared to control devices with no buried mirror. Application of the epitaxial overgrowth techniques to LED structures utilizing electron-beam deposited dielectric/semiconductor 'buried' mirrors and to other semiconductor materials, such as InGaAsSb, SiC, and ZnSe is described.
Metrics
Details
- Title
- Resonant cavity LEDs by lateral epitaxy
- Creators
- Michael G Mauk - AstroPower, Inc. (USA)P. A Burch - AstroPower, Inc. (United States)Scott W Johnson - AstroPower, Inc. (USA)Zane A Shellenbarger - AstroPower, Inc. (United States)James B McNeely - AstroPower, Inc. (United States)Thomas A Goodwin - AstroPower, Inc. (USA)Bryan W Feyock - AstroPower, Inc. (United States)
- Publication Details
- Proceedings of SPIE, v 3002(1), pp 59-66
- Conference
- Light-Emitting Diodes: Research, Manufacturing, and Applications
- Publisher
- Society of Photo-Optical Instrumentation Engineers (SPIE)
- Resource Type
- Conference proceeding
- Language
- English
- Academic Unit
- Engineering Technology
- Web of Science ID
- WOS:A1997BH76D00008
- Scopus ID
- 2-s2.0-0342557451
- Other Identifier
- 991020623758004721
InCites Highlights
Data related to this publication, from InCites Benchmarking & Analytics tool:
- Web of Science research areas
- Engineering, Electrical & Electronic
- Optics