- Title
- Selectively-grown InGaP/GaAs on silicon heterostructures for application to photovoltaic-photoelectrolysis cells
- Creators
- Michael G Mauk - AstroPower Inc., Solar Park, Newark, DE 19716-2000, United StatesAnthony N Tata - AstroPower Inc., Solar Park, Newark, DE 19716-2000, USABryan W Feyock - AstroPower Inc., Solar Park, Newark, DE 19716-2000, USA
- Publication Details
- Journal of crystal growth, v 225(2-4), pp 359-365
- Conference
- Twelfth American Conference on Crystal Growth and Epitaxy, 12th (Vail, Colorado, United States, 13 Aug 2000–18 Aug 2000)
- Publisher
- Elsevier
- Resource Type
- Conference proceeding
- Language
- English
- Academic Unit
- Engineering Technology
- Web of Science ID
- WOS:000169394300046
- Scopus ID
- 2-s2.0-0035335374
- Other Identifier
- 991020623912004721
Conference proceeding
Selectively-grown InGaP/GaAs on silicon heterostructures for application to photovoltaic-photoelectrolysis cells
Journal of crystal growth, v 225(2-4), pp 359-365
01 May 2001
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- Web of Science research areas
- Crystallography
- Materials Science, Multidisciplinary
- Physics, Applied