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Short Circuit Fault Induced Failure of SiC MOSFETs in DC Solid-State Circuit Breakers
Conference proceeding

Short Circuit Fault Induced Failure of SiC MOSFETs in DC Solid-State Circuit Breakers

Reza Kheirollahi, Hua Zhang and Fei Lu
The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Conference Proceedings
01 Jan 2022
DOI: https://doi.org/10.1109/WiPDA56483.2022.9955271

Abstract

Circuit breakers Circuits Commutation Current injection Electric potential Electrical surges Electronic devices Failure analysis Failure modes Interruption MOSFETs Short circuit currents Silicon carbide Solid state Thermal runaway Voltage
Conference Title: 2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA) Conference Start Date: 2022, Nov. 7 Conference End Date: 2022, Nov. 9 Conference Location: Redondo Beach, CA, USAThis paper investigates the failure modes of SiC MOSFETs-based passive voltage clamping dc solid-state circuit breakers (SSCBs). There are two major concerns of main SiC switch failure that are analyzed in this paper: 1) gate-source voltage ringing related switch degradation/failure when cutting off heavy fault current with high di/dt. 2) thermal runaway directly caused by the short circuit surge current in the main switch before the cut-off and transient power strike during cutoff. Two 10A/86A dc interruption experiments are conducted to demonstrate the failure caused by gate ringing due to the high di/dt issue coupled with unavoidable parasitic common source impedance of the device package. The thermal runaway failure due to the short circuit current surge and transient turn-off power strike is also demonstrated by a 631A dc interruption test. At last, an active commutation current injection scheme is discussed as future research trends to address the revealed gate ringing and cut-off power strike issues in SSCBs.

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