Solution growth of thick III-V antimonide alloy epilayers (InAsSb, InGaSb, InGaAsSb, AlgaAsSb, and InAsSbP) for virtual substrates

Conference proceeding

Peer reviewed

Michael G Mauk, Anthony N Tata and Jeffrey A Cox

Journal of crystal growth, v 225(2-4), pp 236-243

01 May 2001

Additional Links

Cross-disciplinary physics: materials science; rheology

Exact sciences and technology

Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)

Materials science

Methods of deposition of films and coatings; film growth and epitaxy

Physics

15 Record Views

15 citations in Scopus

Title: Solution growth of thick III-V antimonide alloy epilayers (InAsSb, InGaSb, InGaAsSb, AlgaAsSb, and InAsSbP) for virtual substrates
Creators: Michael G Mauk - AstroPower, Inc., Solar Park Newark, Delaware 19716-2000, United States
Anthony N Tata - AstroPower, Inc., Solar Park Newark, Delaware 19716-2000, USA
Jeffrey A Cox - AstroPower, Inc., Solar Park Newark, Delaware 19716-2000, United States
Publication Details: Journal of crystal growth, v 225(2-4), pp 236-243
Conference: Twelfth American Conference on Crystal Growth and Epitaxy, 12th (Vail, Colorado, United States, 13 Aug 2000–18 Aug 2000)
Publisher: Elsevier
Resource Type: Conference proceeding
Language: English
Academic Unit: Engineering Technology
Web of Science ID: WOS:000169394300026
Scopus ID: 2-s2.0-0035334828
Other Identifier: 991020623757804721

Data related to this publication, from InCites Benchmarking & Analytics tool:

Web of Science research areas: Crystallography; Materials Science, Multidisciplinary; Physics, Applied