Conference proceeding
Spectral absorption analysis in AlGaAs/GaAs photodetectors
Proceedings of the 2001 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference. (Cat. No.01TH8568), v 1, pp 509-511
2001
Abstract
Spectral photoresponsivity measurements on AlGaAs/GaAs detectors with lateral heterodimensional metal contacts show a peak near the absorption edge of GaAs under low incident power and high biasing conditions. To model this behavior we expand on the photoreflection analysis of AlGaAs/GaAs heterostructures by spatially modulating the optical properties of the GaAs absorption layer as a result of the built-in electric field and the quantum confinement near the interface. Simulations which combine spatial variations in the absorption properties with an existing model of charge collection for metal-semiconductor-metal photodetectors have been able to reproduce the spectral results observed during experimentation.
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Details
- Title
- Spectral absorption analysis in AlGaAs/GaAs photodetectors
- Creators
- F Castro - MotorolaB Nabet
- Publication Details
- Proceedings of the 2001 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference. (Cat. No.01TH8568), v 1, pp 509-511
- Conference
- 2001 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference
- Publisher
- IEEE
- Number of pages
- 1
- Resource Type
- Conference proceeding
- Language
- English
- Academic Unit
- Electrical and Computer Engineering
- Other Identifier
- 991019182773704721