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Strain and the two‐dimensional electronic structure of monolayers of Bi/InAs(110) and Bi/GaAs(110)
Conference proceeding

Strain and the two‐dimensional electronic structure of monolayers of Bi/InAs(110) and Bi/GaAs(110)

D. Heskett, D. McIlroy, D. M. Swanston, A. B. McLean, N. J. DiNardo, H. Munekata and R. Ludeke
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, v 10(4), pp 1949-1952
Jul 1992

Abstract

STRAINS Bi INDIUM ARSENIDES INTERFACE STATES SYNCHROTRON RADIATION BISMUTH ELECTRONIC STRUCTURE ADSORPTION TWO−DIMENSIONAL SYSTEMS GaAs MONOLAYERS BINARY COMPOUNDS PHOTOELECTRON SPECTROSCOPY OVERLAYERS InAs GALLIUM ARSENIDES
The two‐dimensional band structure of monolayers of the Bi/InAs(110)(1×1) and Bi/GaAs(110)(1×1) systems have been measured using the technique of angle‐resolved photoemission spectroscopy with a synchrotron light source. Measurements of the dispersion and bandwidth of the uppermost occupied electronic state nearest the Fermi level revealed that the bandwidth was significantly smaller for the Bi/InAs(110) system. A comparison to available theoretical calculations of Sb overlayers on III–V semiconductor surfaces implies that the differences between the two Bi systems is greater than would be predicted by a standard theoretical analysis. The authors interpret the results as indicating the importance of strain in these systems.

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Engineering, Electrical & Electronic
Nanoscience & Nanotechnology
Physics, Applied
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