Conference proceeding
Study on Moisture Behavior in Flip Chip BGA Packages and Bake Process Optimization
2009 INTERNATIONAL CONFERENCE ON ELECTRONIC PACKAGING TECHNOLOGY & HIGH DENSITY PACKAGING (ICEPT-HDP 2009), 1144
01 Jan 2009
Featured in Collection : UN Sustainable Development Goals @ Drexel
Abstract
The Lead-Free (LF) and Halogen-Free (HF) "green" initiatives are driving the advanced packaging manufacturers to develop new generation materials and assembly technologies. However, the moisture related reliability issues become the significant technical challenge to meet stringent reliability and quality standards comparing to the previous Lead and Halogen technology. In this study, the moisture absorption and desorption performance of Halogen Free and Lead Free material were investigated. The experimental data revealed that after fully baked process there was still some resident moisture which was mainly contained at substrate level. The modeling data of moisture absorption and desorption behavior with 125 degrees C bake comparison was discussed and was fully aligned with experimental data. Moreover, a 'soft bake' method via Nitrogen and dry air was introduced. In low RH effect test, under 25 degrees C / 60%RH precondition process, all the moisture absorbed for 1100 hours can be removed by 'soft' bake. This indicates that not only no moisture absorption in low RH environment, but also an additional 'soft bake' process occurring during the storage time. The results demonstrated that the storage of moisture-sensitive material in the optimized environment is an attractive facility solution which can reduce the risk of popcorn and cracking problems.
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Details
- Title
- Study on Moisture Behavior in Flip Chip BGA Packages and Bake Process Optimization
- Creators
- W. Q. Dai - Intel Prod Shanghai Co Ltd, Shanghai, Peoples R ChinaZ. K. Hua - Shanghai Univ, Minist Educ, Sch Mech & Elect Engn & Automat, Key Lab Adv Display & Syst Applicat, Shanghai 200072, Peoples R ChinaJ. H. Dai - Intel Prod Shanghai Co Ltd, Shanghai, Peoples R ChinaE. W. Pang - Intel Prod Shanghai Co Ltd, Shanghai, Peoples R ChinaL. Jiang - Intel Prod Shanghai Co Ltd, Shanghai, Peoples R ChinaC. Y. Li - Shanghai Univ, Minist Educ, Sch Mech & Elect Engn & Automat, Key Lab Adv Display & Syst Applicat, Shanghai 200072, Peoples R ChinaP. Liao - Shanghai Univ, Minist Educ, Sch Mech & Elect Engn & Automat, Key Lab Adv Display & Syst Applicat, Shanghai 200072, Peoples R ChinaJ. H. Zhang - Shanghai Univ, Minist Educ, Sch Mech & Elect Engn & Automat, Key Lab Adv Display & Syst Applicat, Shanghai 200072, Peoples R China
- Contributors
- K Bi (Editor)J Cai (Editor)
- Publication Details
- 2009 INTERNATIONAL CONFERENCE ON ELECTRONIC PACKAGING TECHNOLOGY & HIGH DENSITY PACKAGING (ICEPT-HDP 2009), 1144
- Conference
- 2009 INTERNATIONAL CONFERENCE ON ELECTRONIC PACKAGING TECHNOLOGY & HIGH DENSITY PACKAGING (ICEPT-HDP 2009)
- Publisher
- IEEE
- Number of pages
- 2
- Grant note
- 4507445982 / Intel Higher Education Program; Intel Corporation
- Resource Type
- Conference proceeding
- Language
- English
- Academic Unit
- Materials Science and Engineering
- Identifiers
- 991019196687604721
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- Industry collaboration
- Domestic collaboration
- Web of Science research areas
- Engineering, Electrical & Electronic