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Switching technology from dc to GHz using 2-D semiconductor laser arrays
Conference proceeding

Switching technology from dc to GHz using 2-D semiconductor laser arrays

Arye Rosen, Paul J Stabile, W. M Janton, A. M Gombar, J Delmaster, Richard Hurwitz, Peter R Herczfeld, A Bahasadri and Aaron J Rosen
Proceedings of SPIE, v 1219(1), pp 518-524
01 May 1990
DOI: https://doi.org/10.1117/12.18289

Abstract

This paper describes the use of a generic switch from dc to GHz frequencies comprising a two-dimensional semiconductor laser diode array and a Si device. A single two-sided PIN device, activated by two 1 kW laser arrays yielded a holding voltage of 1.3 kV and conducted 192 A. The 'on' time of this 1/4 MW switch was 290 ns. In addition, this paper describes the use of optically controlled devices at HF (2-30 MHz) using high voltage PIN diodes as switching devices, and a unique optically controlled attenuator/switch at 60 GHz using a Si slab inside a waveguide. PIN devices tested in an RF circuit between 2.5 and 30 MHz yielded isolation between 28 and 49 dB in the off-state and insertion losses as low as 0.1 dB when illuminated with 280 W of optical power. Measurements at 60 GHz have shown a 0.9 dB insertion loss in the on-state, and an isolation value of better than 21 dB in the off-state.

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Web of Science research areas
Engineering, Electrical & Electronic
Optics
Physics, Applied
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