The electronic structure of molecular beam epitaxy grown InAs (110)

Conference proceeding

Peer reviewed

D. M Swanston, A. B Mclean, D. N Mcilroy, D Heskett, R Ludeke, H Munekata, M Prietsch and N. J Dinardo

Canadian journal of physics (Print), v 70(10-11), pp 1099-1103

1992

Additional Links

Condensed matter: electronic structure, electrical, magnetic, and optical properties

Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures

Exact sciences and technology

Physics

Surface and interface electron states

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Title: The electronic structure of molecular beam epitaxy grown InAs (110)
Creators: D. M Swanston - Queen's univ., dep. physics, Kingston ON K7L 3N6, Canada
A. B Mclean - Queen's univ., dep. physics, Kingston ON K7L 3N6, Canada
D. N Mcilroy - Queen's univ., dep. physics, Kingston ON K7L 3N6, Canada
D Heskett - Queen's univ., dep. physics, Kingston ON K7L 3N6, Canada
R Ludeke - Queen's univ., dep. physics, Kingston ON K7L 3N6, Canada
H Munekata - Queen's univ., dep. physics, Kingston ON K7L 3N6, Canada
M Prietsch - Queen's univ., dep. physics, Kingston ON K7L 3N6, Canada
N. J Dinardo - Queen's University
Publication Details: Canadian journal of physics (Print), v 70(10-11), pp 1099-1103
Conference: Canadian semiconductor technology conference
Publisher: National Research Council of Canada
Resource Type: Conference proceeding
Language: English
Academic Unit: Physics
Web of Science ID: WOS:A1992LD48600056
Other Identifier: 991019184099504721

Data related to this publication, from InCites Benchmarking & Analytics tool:

Collaboration types: Industry collaboration; Domestic collaboration; International collaboration
Web of Science research areas: Physics, Multidisciplinary