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Thin Film Deposition using Atmospheric Pressure Microplasmas
Conference proceeding

Thin Film Deposition using Atmospheric Pressure Microplasmas

D Staack, B Farouk, A Gutsol and A Fridman
2007 IEEE 34th International Conference on Plasma Science (ICOPS), pp 833-833
Jun 2007
DOI: https://doi.org/10.1109/PPPS.2007.4346139

Abstract

Amorphous materials Atmospheric-pressure plasmas Chemical vapor deposition Costs Plasma chemistry Plasma materials processing Plasma stability Radio frequency Sputtering Transistors
Summary form only given. It is desirable to use atmospheric pressure plasmas for thin film material processing because of the lower facility costs compared to vacuum processing and the possibility to operate continuous rather than batch processes. However, several major concerns exist in attempting to use atmospheric pressure plasmas for the plasma enhanced chemical vapor deposition (PECVD) of thin films. These include: 1) the creation of stable non-thermal plasma discharges, 2) discharge uniformity and size, and 3) particle formation. In this research we address these issues with reference to the use of DC and RF microplasmas for the atmospheric pressure PECVD (APPECVD) of hydrogenated amorphous carbon film a-C:H from H 2 , CH 4 precursors.

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