Conference proceeding
Two-stage GaN based multiband power amplifier for software defined radio applications
2006
Abstract
GaN HFETs have been proposed for high power and high bandwidth applications and reached tremendous output power levels. However, there are relatively few circuit examples for multiband power amplifiers fulfilling the requirements of future multiband/multistandard capable 3G/4G base stations, especially for higher output power levels. This work presents promising results of a realized two-stage GaN based wideband power amplifier demonstrator. The amplifier addresses medium range multiband base station applications in the L- and S-Band. The amplifier has been characterized by using unclipped single carrier W-CDMA signals with and without use of digital predistortion. The two-stage amplifier module shows a promising high bandwidth of several 100 MHz, covering GSM, UMTS and WiMAX bands for output power levels up to 10 W average while meeting the 3GPP ACLR specification in a wide frequency range, if digital pre-distortion is applied.
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Details
- Title
- Two-stage GaN based multiband power amplifier for software defined radio applications
- Creators
- T NaßD WiegnerU SeyfriedW TemplS WeberS WörnerP KloseR QuayF. van RaayH WalcherH MasslerM Seelmann-EggebertO KappelerR Kiefer
- Resource Type
- Conference proceeding
- Language
- English
- Academic Unit
- Electrical and Computer Engineering
- Identifiers
- 991019203649404721