Conference proceeding
Variation of contact barrier height in metal-semiconducting carbon nanotube junctions using a localized gate
NANOTECH 2003, VOL 2
01 Jan 2003
Abstract
Electronic devices based on carbon nanotubes provide great promise for future use in integrated circuits. In previous work we have measured the local field effect in a metal-semiconducting carbon nanotube-metal device using a conducting-tip atomic force microscope. Based on those results we propose a consistent electrostatic model that incorporates the image force, electric field and tip potential and demonstrates how the latter reduces the potential barrier seen by thermionically emitted carriers in the metal-nanotube junction. Consistent with experimental data the model describes a position dependent change in the barrier height. This model complements tunneling effects models currently being formulated. Local gating has a much smaller effect on current through the junction than uniform gating using a backgate structure. This allows for an increase in current before tunneling current begins to dominate in the junction.
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Details
- Title
- Variation of contact barrier height in metal-semiconducting carbon nanotube junctions using a localized gate
- Creators
- E GalloB NabetM FreitagA T Johnson
- Contributors
- M Laudon (Editor)B Romanowicz (Editor)
- Publication Details
- NANOTECH 2003, VOL 2
- Publisher
- Computational Publications
- Number of pages
- 4
- Resource Type
- Conference proceeding
- Language
- English
- Academic Unit
- Electrical and Computer Engineering
- Identifiers
- 991019170565504721
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- Web of Science research areas
- Engineering, Electrical & Electronic
- Materials Science, Multidisciplinary
- Physics, Condensed Matter