Conference proceeding
Vertical field HMSM photodetector
Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004, v 3, pp 2328-2331
2004
Featured in Collection : UN Sustainable Development Goals @ Drexel
Abstract
We have previously fabricated /spl delta/-doped heterostructure metal-semiconductor-metal (HMSM) photodetectors with a time response below the 10 ps level, which were much faster than devices of equivalent dimensions. Simulation results on static and dynamic aspects of device behavior indicate the improved performance is partially due to the /spl delta/-doping layer which transforms the lateral electric field to a vertical orientation. A direct result is that, by following the vertical field, photogenerated electrons reach contacts via the two-dimensional electron gas (2DEG) layer in a much shorter time, thus enhancing the transit time dependent dynamic performance.
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Details
- Title
- Vertical field HMSM photodetector
- Creators
- Xia Zhao - Drexel UniversityHung-jen Huang - Drexel UniversityXiying Chen - Drexel UniversityB Nabet - Drexel University
- Publication Details
- Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004, v 3, pp 2328-2331
- Conference
- 7th International Conference on Solid-State and Integrated Circuits Technology, 2004, 7th
- Publisher
- IEEE
- Number of pages
- 1
- Resource Type
- Conference proceeding
- Language
- English
- Academic Unit
- Electrical and Computer Engineering
- Web of Science ID
- WOS:000227342202179
- Other Identifier
- 991019170396304721
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InCites Highlights
Data related to this publication, from InCites Benchmarking & Analytics tool:
- Web of Science research areas
- Engineering, Electrical & Electronic
- Materials Science, Multidisciplinary
- Physics, Condensed Matter