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Two-step spin-coating of vacancy-ordered double perovskites enables growth of thin films for electronic devices
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Two-step spin-coating of vacancy-ordered double perovskites enables growth of thin films for electronic devices

Owen Kuklinski, Alexandra Brumberg, Linjing Tang, Anya Mulligan, Tim Kodalle, Carolin Sutter-Fella, Ram Seshadri and Michael Chabinyc
23 Apr 2025
DOI: https://doi.org/10.5061/dryad.qnk98sfv0
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https://doi.org/10.5061/dryad.qnk98sfv0View
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Abstract

FOS: Materials engineering Materials Chemistry Semiconductors Thin Films
Vacancy-ordered double perovskites (VODPs), such as Cs2TeX6 (X = Cl, Br, I), are lead-free alternatives to conventional metal-halide perovskites (MHPs). One limitation of VODPs is the lack of processes to form thin films relevant for physical characterization and electronic devices. A two-step spin-coating method was developed for synthesizing high-quality films of Cs2TeBr6. Independently depositing CsBr and TeBr4 enables high precursor concentration and control over crystallization dynamics. By optimizing spin-coating parameters, conversion of precursors to phase pure films was observed using structural and surface characterization methods. The growth of mixed-halide systems was investigated using alternative salts including CsCl and CsI. Formation of halide alloys was found to depend on the existence of routes to byproducts. Lastly, single carrier diodes of Cs2TeBr6 were designed following valence band characterization with photoelectron spectroscopy. Temperature-dependent space-charge-limited current measurements revealed that transport occurs by hopping and the hole mobility is 3.2 x 10-5 cm2 V-1 s-1 near room temperature. The insights from the 2-step procedure provide a pathway towards making semiconducting devices from VODPs.

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