An improved understanding of a-Si:H pin solar cells stability was obtained by studying light induced degradation in a-Si:H films and in devices. The current-voltage characteristics and the quantum efficiencies of a-Si:H pin solar cells were measured as a function of intrinsic layer thickness, bias light intensity and degradation condition. Photoconductivity measurements on device quality intrinsic a-Si:H thin film materials showed that the majority carrier (electron) [mu][tau] product degraded from 3x10⁻⁷ cm²/V to 2x10⁻⁷ cm²/V after 6 minutes of 50-Suns light illumination. Using a dual beam technique with steady white light and modulated monochromatic light, a degradation profile was detected in the degraded materials. These results suggest that inhomogeneous degradation may be important to understanding the stability of a-Si:H pin solar cells. An analytical model was developed for degradation in a-Si:H pin solar cells based on inhomogeneous degradation, which was used to explain the 'blue-dip' effect observed in the quantum efficiencies of degraded cells. A new method was developed to investigate the minority carrier (hole) diffusion length in device quality a-Si:H films as a function of degradation. This method uses the Schottky barrier structure to establish a depletion region, which can be controlled by the applied voltage and the bias light intensity. Modulated blue light is used to generate electron hole pairs near the ohmic contacts, and the holes diffuse across the neutral region to be collected. The modulated current is related to the diffusion length of the holes due to this current limiting hole transport. Comparing the results of this new technique to that of the Photocarrier Grating method, the electron drift mobility was found to degrade from 2.5cm²/Vs to 0.15cm²/Vs after 6 minutes of 50-Suns degradation.
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Title
Analytical and experimental studies of the degradation in hydrogenated amorphous silicon solar cells and materials
Creators
Ping Fai Yeung
Awarding Institution
Drexel University
Degree Awarded
Doctor of Philosophy (Ph.D.)
Publisher
Drexel University; Philadelphia, Pennsylvania
Number of pages
xiv, 165 pages
Resource Type
Dissertation
Language
English
Academic Unit
College of Engineering (1970-2026); Drexel University