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Gallium arsenide based metal-semiconductor-metal devices and detectors
Dissertation   Open access

Gallium arsenide based metal-semiconductor-metal devices and detectors

Eric Michael Gallo
Doctor of Philosophy (Ph.D.), Drexel University
Sep 2010
DOI:
https://doi.org/10.17918/etd-6646
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Abstract

Electrical engineering Gallium arsenide semiconductors Nanowires
Each year the creation and refinement of new material growth techniques give rise to novel material systems for electronic device exploration. A metal-semiconductor-metal (MSM) device is the simplest electronic device possible, consisting of two metal contacts on a semiconducting channel. Despite their simplicity, these devices can operate as high performance detectors as well as enable rapid characterization of novel electronic materials. This thesis will discuss the fabrication and characterization of MSM devices on a two-dimensional electron hole gas (2DEHG) and GaAs-based nanowires. 2DEHG structures consist of two spatial separated quantum wells of opposite charge. These devices exhibit a high-speed photo-response, a two plateau varactor response and give rise to several unexplained photoluminescence peaks. GaAs-based nanowire MSMs offer the opportunity to fabricate many of the well known bulk III-V semiconductor devices on the nanoscale. Accomplishing this requires quality ohmic contacts. Several fabrication methods to create ohmic contacts on GaAs nanowires are described, as well as characterization of the light response of these devices and results demonstrating ambipolar transport in a wide bandgap material. The devices offer promise as high speed on-chip interconnects for digital circuits.

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