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Dissertation
High power switching device SPICE models based on circuit response
Doctor of Philosophy (Ph.D.), Drexel University
Aug 2011
DOI:
https://doi.org/10.17918/etd-3650
Abstract
Power electronics converter capabilities are expanding into power levels of 10 kW and above with the support of steadily growing high power semiconductor device capabilities. Computer aided design and circuit simulation tools are likewise growing, yet the supply of available and accurate SPICE models for high power semiconductor devices isn't keeping pace with the expanding device capabilities. In an effort to improve model availability and accuracy, user configurable high power switching device SPICE models for the Schottky diode, Insulated Gate Bipolar and power MOSFET transistors will be developed. In a departure from conventional physics based semiconductor modeling techniques, circuit response models establish how the device responds to circuit characteristics. These SPICE circuit response models will be user configurable by means of data from either or both device measurements and datasheet figures. With access to these models, the circuit designer / application engineer will minimize the need to search for SPICE models of the selected component or need to investigate the overall accuracy of the models that are available.
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Details
- Title
- High power switching device SPICE models based on circuit response
- Creators
- Bryan A. Weaver - DU
- Contributors
- Chikaodinaka Okechi Dike Nwankpa (Advisor) - DU
- Awarding Institution
- Drexel University
- Degree Awarded
- Doctor of Philosophy (Ph.D.)
- Publisher
- Drexel University; Philadelphia, Pennsylvania
- Resource Type
- Dissertation
- Language
- English
- Academic Unit
- College of Engineering (1970-2026); Electrical (and Computer) Engineering [Historical]; Drexel University
- Other Identifier
- 3650; 991014632276904721