Electron energy loss spectroscopy Modulation-doped field-effect transistors Transmission electron microscopy Materials Science
The maturation of new semiconductor and device technology is dependent upon our understanding of device reliability. Silicon has had the benefit of more than 50 years of science, engineering, and statistics, leading to an incredibly mature and robust material platform. Newer device platforms, like GaN, represent exciting new prospects but their technology has yet to mature to reach Si's level reliability. While the properties of GaN devices exceed those of conventional Si- or GaAs-based devices, widespread adoption of GaN technology has been slow due to insufficient understanding of its reliability and device degradation mechanisms. This thesis investigates the degradation mechanisms of GaN-based devices using high-resolution electron microscopy. Transmission electron microscopy (TEM) and scanning-TEM (STEM) are combined with spectroscopic techniques including electron energy-loss spectroscopy (EELS) and energy dispersive x-ray spectroscopy (EDS) to reveal the microstructural evolution of stressed GaN devices. Collectively this work illustrates the importance of physical characterization on developing semiconductor systems. While the vast majority of device characterization is driven by electrical characteristics, the microscopic characterization of devices is an excellent complement to traditional techniques.
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Title
Physical defects and degradation mechanisms of GaN-based electronic devices explored by transmission electron microscopy
Creators
Andrew Charles Lang - DU
Contributors
Mitra Taheri (Advisor) - Drexel University (1970-)
Awarding Institution
Drexel University
Degree Awarded
Doctor of Philosophy (Ph.D.)
Publisher
Drexel University; Philadelphia, Pennsylvania
Number of pages
xviii, 155 pages
Resource Type
Dissertation
Language
English
Academic Unit
Materials (Science and) Engineering (Metallurgical Engineering) [Historical]; College of Engineering (1970-2026); Drexel University