Room temperature deposition of amorphous hydrogenated silicon carbide by ion-assisted plasma enhanced chemical vapor deposition

Dissertation

Open access

Dongsun Kim

Doctor of Philosophy (Ph.D.), Drexel University

1993

DOI:

https://doi.org/10.17918/00007909

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Title: Room temperature deposition of amorphous hydrogenated silicon carbide by ion-assisted plasma enhanced chemical vapor deposition
Creators: Dongsun Kim
Awarding Institution: Drexel University
Degree Awarded: Doctor of Philosophy (Ph.D.)
Publisher: Drexel University; Philadelphia, Pennsylvania
Number of pages: xviii, 204 pages
Resource Type: Dissertation
Language: English
Academic Unit: Drexel University
Other Identifier: 991021888853604721