Files and links (1)
PDFOpen Access (License Unspecified), Open Access
Dissertation
Simulation of polyatomic discharges for thin film deposition processes in low pressure plasma reactors
Doctor of Philosophy (Ph.D.), Drexel University
1999
DOI:
https://doi.org/10.17918/00000475
Abstract
Comprehensive multi-dimensional self-consistent numerical fluid models for radio-frequency capacitively and inductively coupled methane discharges were developed to predict diamond-like-carbon thin film deposition/etching rate on the wafer. A numerical model of glow discharge provides insight on the physical phenomena in the discharge leading to better understanding and design of the reactor. The developed discharge models included detailed discharge physics, gas-phase chemistry and surface chemistry modeling. To understand the basic discharge phenomena, one-dimensional radio frequency capacitively coupled Ar plasma was simulated using a fluid model. The model was modified for methane plasma to predict the profiles of the plasma variables. The model was then extended to two-dimensional cylindrical coordinates to capture the effects of asymmetry of the reactor on the plasma variables. The necessary dc bias for the discharge was predicted such that the cycle-averaged current to the powered electrode was zero. A discharge chemistry model was also developed to predict various radical and neutral densities in the plasma, and their fluxes to the cathode. The species fluxes are used to predict film deposition rate and the properties of the deposited film. The model predictions of plasma density, self-generated de bias, cathode current and plasma potential compared well with the experimental results. A high density plasma with inductive coupling at low pressure was also considered. Separate rf bias and dc bias are applied to the substrate holder to modulate the ion energy. The present model simulates electron, ion and neutral transport, including detailed discharge and surface chemistry. The model has been implemented for methane discharge to obtain deposition/etching of thin carbon film on the wafer. To the author's knowledge, this is the first attempt to simulate capacitively and inductively coupled plasmas self-consistently for a depositing gas under the operating conditions of experimental reactors. The discharge models were used to investigate the effects of operating and design parameters of the reactors on plasma process characteristics to obtain better process characteristics on the wafer. These parameters can be used to design new reactors for the deposition/etching process. The models can be modified for different feed gases for other applications like plasma etching or sputtering.
Metrics
36 File views/ downloads
13 Record Views
Details
- Title
- Simulation of polyatomic discharges for thin film deposition processes in low pressure plasma reactors
- Creators
- Kallol Bera
- Contributors
- Bakhtier Farouk (Advisor)
- Awarding Institution
- Drexel University
- Degree Awarded
- Doctor of Philosophy (Ph.D.)
- Publisher
- Drexel University; Philadelphia, Pennsylvania
- Number of pages
- xix, 189 pages
- Resource Type
- Dissertation
- Language
- English
- Academic Unit
- College of Engineering (1970-2026); Mechanical Engineering (and Mechanics) [Historical]; Drexel University
- Other Identifier
- 991014970311004721