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Fabrication and characterization of poly(4-vinylpyridine)-based all solid state dye-sensitized solar cells by initiated chemical vapor deposition
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Fabrication and characterization of poly(4-vinylpyridine)-based all solid state dye-sensitized solar cells by initiated chemical vapor deposition

Steven L. Farrell
Master of Science (M.S.), Drexel University
Jun 2014
DOI:
https://doi.org/10.17918/etd-4464
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Abstract

Solar cells Chemical Engineering Chemical Vapor Deposition
The novel technique of initiated chemical vapor deposition (iCVD) was used to develop an all solid state dye-sensitized solar cell (DSSC) using a solid polymer electrolyte. iCVD was chosen for this process due to its advantage in polymerizing within high aspect ratio porous geometries. Poly(4-vinylpyridine) (P4VP) was synthesized via iCVD in a planar geometry on a silicon wafer to observe the effects of iCVD reaction conditions on the deposition rate and properties of the resulting thin film. P4VP-based DSSCs were fabricated in iCVD using previously described methods for other polymers. Using N-719 ruthenium dye, the DSSCs were fabricated and tested with linear sweep voltammetry. The results were compared to liquid-based DSSCs prepared using similar materials and methods without iCVD treatment. The deposition rate of iCVD has been found to have a positive, linear relationship to the ratio of monomer pressure to saturation pressure (PMono/PSat). This change is independent of how the reaction conditions were varied, as changes in pressure and temperature carried the same effect on deposition rate. The P4VP-based cells exhibited efficiencies up to 1.5% compared to the liquid-based cell efficiencies up to 3.1%, however the polymer cells had a fill factor that was up to 10% greater than that of the liquid cells. The average short-circuit current density for the P4VP-based cells was 4.14 ± 0.35 mA/cm2 compared to the liquid cell average of 10.42 ± 0.19 mA/cm2. The average open-circuit voltage for the P4VP-based cells was 0.516 ± 0.005 V compared to the liquid cell average of 0.490 ± 0.003 V.

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