Modeling of the reactive ion etching of gallium arsenide semiconductor

Thesis

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Chandrasekharan Kothandaraman

Master of Science (M.S.), Drexel University

Jun 1987

DOI:

https://doi.org/10.17918/00007482

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Title: Modeling of the reactive ion etching of gallium arsenide semiconductor
Creators: Chandrasekharan Kothandaraman
Awarding Institution: Drexel University
Degree Awarded: Master of Science (M.S.)
Publisher: Drexel University; Philadelphia, Pennsylvania
Number of pages: vii, 44 pages
Resource Type: Thesis
Language: English
Academic Unit: Drexel University
Other Identifier: 991021888783304721