Study of the response of a single PN junction device to pulsed high energy ionizing radiation

Thesis

James A. Nix

Master of Science (M.S.), Drexel Institute of Technology

1965

DOI:

https://doi.org/10.17918/00003002

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Diodes, Semiconductor

Semiconductors--Effect of radiation on

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Title: Study of the response of a single PN junction device to pulsed high energy ionizing radiation
Creators: James A. Nix
Awarding Institution: Drexel Institute of Technology
Degree Awarded: Master of Science (M.S.)
Publisher: Drexel Institute of Technology; Philadelphia, Pennsylvania
Number of pages: 46 pages
Resource Type: Thesis
Language: English
Academic Unit: Drexel Institute of Technology (1936-1970)
Other Identifier: 991021888711704721