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100 kW DC biased, all semiconductor switch using Si P-I-N diodes and AlGaAs 2-D laser arrays
Journal article

100 kW DC biased, all semiconductor switch using Si P-I-N diodes and AlGaAs 2-D laser arrays

A Rosen, P.J Stabile, A.M Gombar, W.M Janton, A Bahasadri and P Herczfeld
IEEE photonics technology letters, v 1(6), pp 132-134
Jun 1989
DOI: https://doi.org/10.1109/68.36012

Abstract

High speed optical techniques Optical arrays Optical pulses Optical saturation Optical switches P-i-n diodes Semiconductor laser arrays Solid lasers Switching circuits Voltage
A two-dimensional laser array, delivering a peak power of 1 kW with an overall efficiency of 33%, was used to activate silicon p-i-n diodes. A single device, activated by a 1 kW laser, produced a holding voltage of 1000 V and conducted 56 A. When two similar p-i-n diodes were connected in parallel and activated by two 1 kW AlGaAs laser arrays, a holding voltage of 1000 V and conduction of 100 A were obtained.< >

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