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2D, Physical‐Vapor Growth of Low‐Coercivity, Epitaxial Ferroelectric Sc 0.3 Al 0.7 N on Scalable Substrates
Journal article   Peer reviewed

2D, Physical‐Vapor Growth of Low‐Coercivity, Epitaxial Ferroelectric Sc 0.3 Al 0.7 N on Scalable Substrates

Yu Yun, Liyan Wu, Drew Behrendt, Pariasadat Musavigharavi, Dhiren K. Pradhan, Yunfei He, Yichen Guo, Rajeev Kumar Rai, Songsong Zhou, Craig L. Johnson, …
Advanced materials (Weinheim), v 37(33), 2501931
09 Jun 2025
PMID: 40489209

Abstract

density functional theory ferroelectric nitrides low coercive field pulsed laser deposition ultrathin epitaxial films
Ferroelectric nitrides attract immense attention due to their excellent electrical, mechanical, and thermal properties as well as for their compatibility with scalable semiconductor technology. The availability of high‐quality nitride films possessing tailorable coercive voltage and field, however, remains challenging, and is a key for deeper exploration of switching dynamics and practical applications in low‐power devices. 2D growth of epitaxial thin (≲20 nm) c ‐axis‐oriented Sc 0.3 Al 0.7 N films is reported on Al 2 O 3 (0001) and on electrically conductive 4 H ‐SiC (0001), obtained by reflection high‐energy electron diffraction‐monitored layer‐by‐layer physical vapor deposition growth. Films exhibit high quality, as evidenced by rocking curve full‐width at half‐maximum (FWHM) as narrow as ≈0.02°, and an atomically abrupt film‐substrate interface with low dislocation density. The coercive field of Sc 0.3 Al 0.7 N/4 H ‐SiC (0001) heterostructures is as low as 2.75 MV cm −1 . Moreover, a high endurance of >10 9 cycles at saturation polarization is achieved. Density functional theory calculations of a model system reveal that an improved crystal quality, including atomically abrupt ferroelectric nitride‐metal interface, facilitates the reduction in the switching barriers, and leads to reduced coercivity. These findings demonstrate the feasibility of obtaining high‐quality epitaxial ferroelectric nitride films on highly scalable and radiation‐resistant substrates, and their potential for energy‐efficient electronic devices.

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Collaboration types
Domestic collaboration
Web of Science research areas
Chemistry, Multidisciplinary
Chemistry, Physical
Materials Science, Multidisciplinary
Nanoscience & Nanotechnology
Physics, Applied
Physics, Condensed Matter
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