Journal article
A heterojunction metal-semiconductor-metal photodetector
IEEE photonics technology letters, v 9(2)
Feb 1997
Featured in Collection : UN Sustainable Development Goals @ Drexel
Abstract
A novel metal-semiconductor-metal photodetector is demonstrated in which a heterojunction is formed of doped Al/sub 0.24/Ga/sub 0.76/As layer on GaAs. The new device shows improved rectifying characteristics since the Schottky metal contacts a two-dimensional electron gas. The triangular quantum well that is formed at the hetero-interface due to doping of Al/sub 0.24/Ga/sub 0.76/As improves collection of optically generated electrons. The AlGaAs window also reduces reflection of light from air and eliminates GaAs surface recombination centers. The fabricated devices show up to a factor of four higher photocurrent and an order of magnitude less dark current than a conventional MSM. They also show smaller reach-through voltages consistent with the expected metal to two-dimensional gas contact properties.
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Details
- Title
- A heterojunction metal-semiconductor-metal photodetector
- Creators
- B Nabet - Drexel University
- Publication Details
- IEEE photonics technology letters, v 9(2)
- Publisher
- IEEE
- Resource Type
- Journal article
- Language
- English
- Academic Unit
- Electrical and Computer Engineering
- Web of Science ID
- WOS:A1997WE30400029
- Scopus ID
- 2-s2.0-0031076650
- Other Identifier
- 991019168296704721
UN Sustainable Development Goals (SDGs)
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InCites Highlights
Data related to this publication, from InCites Benchmarking & Analytics tool:
- Web of Science research areas
- Engineering, Electrical & Electronic
- Optics
- Physics, Applied