Journal article
A new approach for RIN peak and phase noise suppression in microchip lasers
IEEE MTT-S International Microwave Symposium digest, v 2, pp 1377-1380
01 Jan 2002
Abstract
This paper is concerned with the suppression of the relative intensity noise (RIN) peak and phase noise of a diode pumped Neodymium-doped Lithium Niobate (Nd:LiNbO sub(3)) microchip laser. Relaxation oscillations result in about 15-20 dB noise peak above the flat noise at 350 kHz offset frequency. In case of high quality requirements this noise peak is significantly disturbing. In this paper a new approach is presented for the suppression of the RIN peak and phase noise in microchip lasers.
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Details
- Title
- A new approach for RIN peak and phase noise suppression in microchip lasers
- Creators
- Mark Csornyei - Budapest University of Technology and EconomicsTibor Berceli - Budapest University of Technology and EconomicsTamas Banky - Budapest University of Technology and EconomicsTamas Marozsak - Budapest University of Technology and EconomicsPeter Herczfeld
- Publication Details
- IEEE MTT-S International Microwave Symposium digest, v 2, pp 1377-1380
- Publisher
- The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
- Resource Type
- Journal article
- Language
- English
- Academic Unit
- [Retired Faculty]
- Web of Science ID
- WOS:000178310900323
- Scopus ID
- 2-s2.0-0036070375
- Other Identifier
- 991019167861204721
InCites Highlights
Data related to this publication, from InCites Benchmarking & Analytics tool:
- Collaboration types
- Domestic collaboration
- International collaboration
- Web of Science research areas
- Engineering, Electrical & Electronic
- Optics
- Telecommunications