Journal article
Accurate closed-form expression for sheet carrier density calculations in modulation-doped heterostructures
Electronics letters, v 34(22), pp 2170-2171
29 Oct 1998
Featured in Collection : UN Sustainable Development Goals @ Drexel
Abstract
An accurate expression for sheet carrier density (n(s)) calculations in modulation-doped heterostructures is developed from a nonlinear model of the Fermi potential variation with n(s). This closed-form expression produces numerical results that agree well with computer simulations of low sheet carrier density AlGaAs/GaAs heterostructures at 300 K.
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Details
- Title
- Accurate closed-form expression for sheet carrier density calculations in modulation-doped heterostructures
- Creators
- F Castro - Drexel UniversityB Nabet - Drexel UniversityJ Culp - Drexel University
- Publication Details
- Electronics letters, v 34(22), pp 2170-2171
- Publisher
- IEE-INST ELEC ENG
- Number of pages
- 2
- Resource Type
- Journal article
- Language
- English
- Academic Unit
- Digital Media; Electrical and Computer Engineering
- Web of Science ID
- WOS:000076978600067
- Scopus ID
- 2-s2.0-3743135160
- Other Identifier
- 991019168497804721
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Data related to this publication, from InCites Benchmarking & Analytics tool:
- Web of Science research areas
- Engineering, Electrical & Electronic