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Aluminum Oxide Passivating Tunneling Interlayers for Molybdenum Oxide Hole-Selective Contacts
Journal article   Open access   Peer reviewed

Aluminum Oxide Passivating Tunneling Interlayers for Molybdenum Oxide Hole-Selective Contacts

Benjamin E. Davis, Nicholas C. Strandwitz and Lehigh Univ., Bethlehem, PA (United States)
IEEE journal of photovoltaics, v 10(3), pp 722-728
01 May 2020
url
https://doi.org/10.1109/JPHOTOV.2020.2973447View
Published, Version of Record (VoR) Restricted

Abstract

Energy & Fuels Materials Science Materials Science, Multidisciplinary Physical Sciences Physics Physics, Applied Science & Technology Technology
Aluminum oxide thin films fabricated via atomic layer deposition are introduced as passivating tunneling interlayers between hole-selective molybdenum oxide contacts and silicon absorbers. Surface recombination velocity and specific contact resistivity are reported as a function of Al2O3 thickness. The effects of substrate chemical pretreatment, the thermal history of the Al2O3 layers prior to MoOx deposition, and the thermal history of the completed Al2O3/MoOx stacks were also investigated. When an SiOx/Al2O3 passivating stack was incorporated and the completed test structure was annealed at 200 degrees C, the observed recombination velocities were reduced from similar to 10 000 cm/s for an unpassivated (initially hydrogen-terminated) Si/MoOx direct contact to similar to 500 cm/s, while maintaining a contact resistivity at or below 0.1 omega center dot cm(2). The data demonstrate the capability of ultrathin Al2O3 to improve Si/MoOx contact properties and may be of interest in the design of future Si heterojunctions.

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Web of Science research areas
Energy & Fuels
Materials Science, Multidisciplinary
Physics, Applied
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