Journal article
An analytical model for the photodetection mechanisms in high-electron mobility transistors
IEEE transactions on microwave theory and techniques, v 44(12), pp 2279-2287
01 Dec 1996
Featured in Collection : UN Sustainable Development Goals @ Drexel
Abstract
The use of microwave high-electron mobility transistors (HEMT's) as photodetectors or optically controlled circuit elements have attracted interest. A model of the optical characteristics of HEMT's, which takes into account carrier transport as well as the quantum mechanical nature of the two-dimensional (2-D) electron gas channel, is presented. It is shown that the effect of illumination is equivalent to a shift in the gate to source bias voltage, referred to as the internal photovoltaic effect. The theoretical model is supported by experimental results that demonstrate that the HEMT photoresponse is a nonlinear function of light intensity with very high responsivity at low optical power levels.
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Details
- Title
- An analytical model for the photodetection mechanisms in high-electron mobility transistors
- Creators
- M A Romero - São Paulo State UniversityMAG MartinezP R Herczfeld - Drexel University
- Publication Details
- IEEE transactions on microwave theory and techniques, v 44(12), pp 2279-2287
- Publisher
- IEEE
- Number of pages
- 9
- Resource Type
- Journal article
- Language
- English
- Academic Unit
- [Retired Faculty]
- Web of Science ID
- WOS:A1996VZ13800019
- Scopus ID
- 2-s2.0-0030397356
- Other Identifier
- 991019168078704721
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- Collaboration types
- Domestic collaboration
- International collaboration
- Web of Science research areas
- Engineering, Electrical & Electronic
- Telecommunications