Journal article
Annealing effects on structural and electrical properties of fluorinated amorphous carbon films deposited by plasma enhanced chemical vapor deposition
Thin solid films, v 423(1), pp 97-102
2003
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Abstract
The annealing effects on the structural and electrical properties of fluorinated amorphous carbon (a-C:F) thin films prepared from C
6F
6 and Ar plasma are investigated in a N
2 environment at 200 mTorr. The a-C:F films deposited at room temperature are thermally stable up to 250 °C, but as the annealing temperature is increased beyond 300 °C, the fluorine incorporation in the film is reduced, and the degree of crosslinking and graphitization in the film appears to be enhanced. At the annealing temperature of 250 °C, the chemical bond structures of the film are unchanged noticeably, but the interface trapped charges between the film and the silicon substrate are reduced significantly. The increased annealing temperature contributes the decrease of both the interface charges and the effective charge density in the a-C:F film. Higher self-bias voltage is shown to reduce the charge density in the film.
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Details
- Title
- Annealing effects on structural and electrical properties of fluorinated amorphous carbon films deposited by plasma enhanced chemical vapor deposition
- Creators
- Jeong W Yi - Drexel UniversityYoung H Lee - Drexel UniversityBakhtier Farouk - Drexel University
- Publication Details
- Thin solid films, v 423(1), pp 97-102
- Publisher
- Elsevier
- Resource Type
- Journal article
- Language
- English
- Academic Unit
- Mechanical Engineering and Mechanics
- Web of Science ID
- WOS:000182542300012
- Scopus ID
- 2-s2.0-0037217672
- Other Identifier
- 991019169634904721
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InCites Highlights
Data related to this publication, from InCites Benchmarking & Analytics tool:
- Web of Science research areas
- Materials Science, Coatings & Films
- Materials Science, Multidisciplinary
- Physics, Applied
- Physics, Condensed Matter