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Annealing effects on structural and electrical properties of fluorinated amorphous carbon films deposited by plasma enhanced chemical vapor deposition
Journal article   Peer reviewed

Annealing effects on structural and electrical properties of fluorinated amorphous carbon films deposited by plasma enhanced chemical vapor deposition

Jeong W Yi, Young H Lee and Bakhtier Farouk
Thin solid films, v 423(1), pp 97-102
2003

Abstract

Dielectric constant Fluorinated amorphous carbon films Thermal stability
The annealing effects on the structural and electrical properties of fluorinated amorphous carbon (a-C:F) thin films prepared from C 6F 6 and Ar plasma are investigated in a N 2 environment at 200 mTorr. The a-C:F films deposited at room temperature are thermally stable up to 250 °C, but as the annealing temperature is increased beyond 300 °C, the fluorine incorporation in the film is reduced, and the degree of crosslinking and graphitization in the film appears to be enhanced. At the annealing temperature of 250 °C, the chemical bond structures of the film are unchanged noticeably, but the interface trapped charges between the film and the silicon substrate are reduced significantly. The increased annealing temperature contributes the decrease of both the interface charges and the effective charge density in the a-C:F film. Higher self-bias voltage is shown to reduce the charge density in the film.

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Web of Science research areas
Materials Science, Coatings & Films
Materials Science, Multidisciplinary
Physics, Applied
Physics, Condensed Matter
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