Journal article
Approaching the pT range with a 2DEG InGaAs/InP Hall sensor at 77 K
Microelectronic engineering, v 51, pp 333-342
2000
Abstract
The noise of two-dimensional electron gas InGaAs/InP Hall sensors of various dimensions was studied. In the first part of the work we show that for large-scale sensors (>0.2 mm linear dimension) at 77 K and at 1 kHz, a sensitivity better then 1 nT can be achieved. The second part of present work deals with the noise measurements of 2 and 10 μm sensors dependent on bias current, frequency, applied magnetic field and temperature. It was found that the low-frequency noise of the 10 μm sensor rapidly increased for applied magnetic field, but the noise of the 2 μm sensor is a complicated function of temperature and magnetic field: for low temperatures and fields 1–3 T is the low-frequency noise of the sensor suppressed.
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Details
- Title
- Approaching the pT range with a 2DEG InGaAs/InP Hall sensor at 77 K
- Creators
- Vladimı́r Cambel - Institute of Electrical Engineering, Slovak Academy of Sciences, 842 39 Bratislava, Slovak RepublicGoran Karapetrov - Argonne National LaboratoryPeter Eliáš - Slovak Academy of SciencesStanislav Hasenöhrl - Slovak Academy of SciencesWai-Kwong Kwok - Argonne National LaboratoryJochen Krause - Ernst Ruska CentreJán Maňka - Slovak Academy of Sciences
- Publication Details
- Microelectronic engineering, v 51, pp 333-342
- Publisher
- Elsevier
- Resource Type
- Journal article
- Language
- English
- Academic Unit
- Physics
- Web of Science ID
- WOS:000087431500042
- Scopus ID
- 2-s2.0-0033690558
- Other Identifier
- 991019295310304721
InCites Highlights
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- Collaboration types
- Domestic collaboration
- International collaboration
- Web of Science research areas
- Engineering, Electrical & Electronic
- Nanoscience & Nanotechnology
- Optics
- Physics, Applied