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Atomic-Scale Characterization of Oxide Thin Films Gated by Ionic Liquid
Journal article   Peer reviewed

Atomic-Scale Characterization of Oxide Thin Films Gated by Ionic Liquid

Andrew C. Lang, Jennifer D. Sloppy, Hessam Ghassemi, Robert C. Devlin, Rebecca J. Sichel-Tissot, Juan-Carlos Idrobo, Steven J. May, Mitra L. Taheri and Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)
ACS applied materials & interfaces, v 6(19), pp 17018-17023
08 Oct 2014
PMID: 25188384

Abstract

Materials Science Materials Science, Multidisciplinary Nanoscience & Nanotechnology Science & Technology Science & Technology - Other Topics Technology
Ionic liquids (ILs) have received considerable interest for use in electrostatic gating in complex oxide systems. Understanding the ionic liquid/oxide interface, and any bias-induced electrochemical degradation, is critical for the interpretation of transport phenomena. The integrity of the interface between ionic liquid 1-ethyl-3-methylimidazolium hexafluorophosphate and La1/3Sr2/3FeO3 under various biasing conditions was examined by analytical transmission electron microscopy, and we report film degradation in the form of an irreversible chemical reaction regardless of the applied bias. This results in an intermixing region of 4-6 nm at the IL/oxide interface. Electron energy loss spectroscopy shows La and Fe migration into the ionic liquid, resulting in secondary phase formation under negative bias. Our approach can be extended to other ionic liquid/oxide systems in order to better understand the electrochemical stability window of these device structures.

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Domestic collaboration
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Materials Science, Multidisciplinary
Nanoscience & Nanotechnology
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