Journal article
BaTiO3 Thin Films from Atomic Layer Deposition: A Superlattice Approach
Journal of physical chemistry. C, v 121(31), pp 16911-16920
10 Aug 2017
Featured in Collection : UN Sustainable Development Goals @ Drexel
Abstract
A superlattice approach for the atomic layer deposition of polycrystalline BaTiO3 thin films is presented as an example for an effective route to produce high-quality complex oxide films with excellent thickness and compositional control. This method effectively mitigates any undesirable reactions between the different precursors and allows an individual optimization of the reaction conditions for the Ba-O and the Ti-O subcycles. By growth of nanometer thick alternating Ba(OH)(2) and TiO2 layers, the advantages of binary oxide atomic layer deposition are transferred into the synthesis of ternary compounds, permitting extremely high control of the cation ratio and superior uniformity. Whereas the Ba(OH)(2) layers are partially crystalline after the deposition, the TiO2 layers remain mostly amorphous. The layers react to polycrystalline, polymorph BaTiO3 above 500 degrees C, releasing H2O. This solid-state reaction is accompanied by an abrupt in thickness. Transmission electron microscopy and Raman spectroscopy reveal the presence of hexagonal BaTiO3 in addition to the perovskite phase in the annealed films. The microstructure with relatively small grains of similar to 70 (A) over circle and different phases is a direct consequence of the abrupt formation reaction. The electrical properties transition from the initially highly insulating dielectric semiamorphous superlattice into a polycrystalline BaTiO3 thin film with a dielectric constant of 117 and a dielectric loss of 0.001 at 1 MHz after annealing at 600 degrees C in air, which, together with the suppression of ferroelectricity at room temperature, are very appealing properties for voltage tunable devices.
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Details
- Title
- BaTiO3 Thin Films from Atomic Layer Deposition: A Superlattice Approach
- Creators
- Matthias Falmbigl - Drexel Univ, Dept Mat Sci & Engn, Philadelphia, PA 19104 USAIrina S. Golovina - Institute of Semiconductor PhysicsAleksandr V. Plokhikh - Drexel Univ, Dept Mat Sci & Engn, Philadelphia, PA 19104 USADominic Imbrenda - Drexel Univ, Dept Elect & Comp Engn, Philadelphia, PA 19104 USAAdrian Podpirka - Drexel Univ, Dept Mat Sci & Engn, Philadelphia, PA 19104 USAChristopher J. Hawley - Drexel Univ, Dept Mat Sci & Engn, Philadelphia, PA 19104 USAGeoffrey Xiao - Drexel Univ, Dept Mat Sci & Engn, Philadelphia, PA 19104 USAAlejandro Gutierrez-Perez - Drexel Univ, Dept Mat Sci & Engn, Philadelphia, PA 19104 USAIgor A. Karateev - Kurchatov InstituteAlexander L. Vasiliev - Kurchatov InstituteThomas C. Parker - United States Army Research LaboratoryJonathan E. Spanier - Drexel Univ, Dept Mat Sci & Engn, Philadelphia, PA 19104 USA
- Publication Details
- Journal of physical chemistry. C, v 121(31), pp 16911-16920
- Publisher
- American Chemical Society; Washington, DC
- Number of pages
- 10
- Grant note
- IIP 1403463 / National Science Foundation (NSF) DMR 1608887 / NSF DMR; National Science Foundation (NSF) 1608887 / Direct For Mathematical & Physical Scien; National Science Foundation (NSF); NSF - Directorate for Mathematical & Physical Sciences (MPS) N00014-15-11-2170 / Office of Naval Research
- Resource Type
- Journal article
- Language
- English
- Academic Unit
- Mechanical Engineering and Mechanics
- Web of Science ID
- WOS:000407655900026
- Scopus ID
- 2-s2.0-85027352603
- Other Identifier
- 991019168626504721
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- Collaboration types
- Domestic collaboration
- International collaboration
- Web of Science research areas
- Chemistry, Physical
- Materials Science, Multidisciplinary
- Nanoscience & Nanotechnology