Journal article
Bias-dependent noise up-conversion factor in HBT oscillators
IEEE microwave and guided wave letters, v 4(12), pp 423-425
01 Jan 1994
Abstract
This paper reports on the low-frequency noise up-conversion process in HBT transistors and their contributions to the close-in carrier phase noise of the HBT based oscillators. The experimental results of an HBT oscillator at 5.6 GHz demonstrate that the low-frequency noise up-conversion factor is primarily function of the transistor's phase variation to its quiescent point. Thus, in addition to the transistor's noise parameters of f sub(c) and N sub(F), the phase sensitivity to the bias point provides another important transistor parameter in design of low phase noise oscillators. This concept can also be extended to oscillators based on other devices, such as BJT's, MESFET's and HEMT's.
Metrics
Details
- Title
- Bias-dependent noise up-conversion factor in HBT oscillators
- Creators
- Xiangdong Zhang - Drexel UniversityAfshin Daryoush - Drexel University
- Publication Details
- IEEE microwave and guided wave letters, v 4(12), pp 423-425
- Publisher
- The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
- Resource Type
- Journal article
- Language
- English
- Academic Unit
- Electrical and Computer Engineering
- Web of Science ID
- WOS:A1994PV93900012
- Scopus ID
- 2-s2.0-0028733155
- Other Identifier
- 991019173986504721
InCites Highlights
Data related to this publication, from InCites Benchmarking & Analytics tool:
- Web of Science research areas
- Engineering, Electrical & Electronic