Journal article
Broad-bandwidth, high-responsivity intermediate growth temperature GaAs MSM photodetectors
IEEE photonics technology letters, v 7(12), pp 1483-1485
Dec 1995
Featured in Collection : UN Sustainable Development Goals @ Drexel
Abstract
In this letter, we report the design, fabrication, parametric testing, and analysis of a intermediate growth temperature (IGT) GaAs MSM photodetectors. The broad-area, ultrafast photodetector displays linear and nonlinear photocurrent generation characteristics as a function of applied bias and optical power. The photocurrent/dark current ratio 7/spl times/10/sup 3/ is significantly larger than normal growth temperature or low growth temperature 200/spl deg/C based GaAs MSM's. The optical responsivity of 130 mV/pJ Is the highest ever reported for similar ultrafast MSM photodetectors. This device is uniquely suited for high-speed, high-photocurrent applications, such as optoelectronic trigger sources for phased-array antenna systems.
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Details
- Title
- Broad-bandwidth, high-responsivity intermediate growth temperature GaAs MSM photodetectors
- Creators
- B.C Tousley - United States Military AcademyN Davids - United States Military AcademyA.H Sayles - United States Military AcademyA PaolellaP CookeM.L LemouneR.P MoerkirkB Nabet
- Publication Details
- IEEE photonics technology letters, v 7(12), pp 1483-1485
- Publisher
- IEEE
- Resource Type
- Journal article
- Language
- English
- Academic Unit
- Electrical and Computer Engineering
- Web of Science ID
- WOS:A1995TM71300034
- Scopus ID
- 2-s2.0-0029485060
- Other Identifier
- 991019173743504721
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InCites Highlights
Data related to this publication, from InCites Benchmarking & Analytics tool:
- Collaboration types
- Domestic collaboration
- Web of Science research areas
- Engineering, Electrical & Electronic
- Optics
- Physics, Applied