Journal article
Carrier dynamics in InAs quantum dots investigated by current transient response to quasi-resonant interband excitation
Physica. E, Low-dimensional systems & nanostructures, v 40(6), pp 2119-2121
01 Apr 2008
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Abstract
We have investigated the photocurrent transient response of planar metal-semiconductor-metal (MSM) structures containing a single layer of self-assembled InAs quantum dots (QDs) embedded in different matrices of GaAs or InGaAs. Growth conditions are such that ground state transition energies correspond to the wavelength range of 1.2-1.3 mu m. Electron-hole pairs are created in the QDs, due to a quasi-resonant interband excitation, allowing for direct observation of the carrier dynamics under lateral electric field. Results prove the reasonable detection capability of one layer of QDs in a common photodetector structure with time responses of the order of 10 ps. A long tail, about 100 ps, but at a small fraction of the peak response amplitude is also observed. (C) 2007 Elsevier B.V. All rights reserved.
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Details
- Title
- Carrier dynamics in InAs quantum dots investigated by current transient response to quasi-resonant interband excitation
- Creators
- A. Cola - Institute for Microelectronics and MicrosystemsA. Persano - Institute for Microelectronics and MicrosystemsM. Currie - United States Naval Research LaboratoryA. Convertino - Institute of Nanostructured MaterialsM. Lomascolo - Institute for Microelectronics and MicrosystemsB. Nabet - Drexel University
- Publication Details
- Physica. E, Low-dimensional systems & nanostructures, v 40(6), pp 2119-2121
- Publisher
- Elsevier
- Number of pages
- 3
- Resource Type
- Journal article
- Language
- English
- Academic Unit
- Electrical and Computer Engineering
- Web of Science ID
- WOS:000255717400107
- Scopus ID
- 2-s2.0-41349100223
- Other Identifier
- 991019168215904721
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- Collaboration types
- Domestic collaboration
- International collaboration
- Web of Science research areas
- Nanoscience & Nanotechnology
- Physics, Condensed Matter