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Carrier dynamics in InAs quantum dots investigated by current transient response to quasi-resonant interband excitation
Journal article   Peer reviewed

Carrier dynamics in InAs quantum dots investigated by current transient response to quasi-resonant interband excitation

A. Cola, A. Persano, M. Currie, A. Convertino, M. Lomascolo and B. Nabet
Physica. E, Low-dimensional systems & nanostructures, v 40(6), pp 2119-2121
01 Apr 2008

Abstract

Nanoscience & Nanotechnology Physical Sciences Physics Physics, Condensed Matter Science & Technology Science & Technology - Other Topics
We have investigated the photocurrent transient response of planar metal-semiconductor-metal (MSM) structures containing a single layer of self-assembled InAs quantum dots (QDs) embedded in different matrices of GaAs or InGaAs. Growth conditions are such that ground state transition energies correspond to the wavelength range of 1.2-1.3 mu m. Electron-hole pairs are created in the QDs, due to a quasi-resonant interband excitation, allowing for direct observation of the carrier dynamics under lateral electric field. Results prove the reasonable detection capability of one layer of QDs in a common photodetector structure with time responses of the order of 10 ps. A long tail, about 100 ps, but at a small fraction of the peak response amplitude is also observed. (C) 2007 Elsevier B.V. All rights reserved.

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Web of Science research areas
Nanoscience & Nanotechnology
Physics, Condensed Matter
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