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Characteristics of THz waves and carrier scattering in boron-doped epitaxial Si and Si1-xGex films
Journal article   Peer reviewed

Characteristics of THz waves and carrier scattering in boron-doped epitaxial Si and Si1-xGex films

S K Ray, T N Adam, R T Troeger, J Kolodzey, G Looney and A Rosen
Journal of applied physics, v 95(10), pp 5301-5304
15 May 2004
DOI: https://doi.org/10.1063/1.1690487
Featured in Collection :   UN Sustainable Development Goals @ Drexel

Abstract

Physical Sciences Physics Physics, Applied Science & Technology
The absorption and reflection characteristics of boron-doped silicon and silicon-germanium alloys have been investigated in the frequency range from 1.6 to 60 THz. The absorption increases with doping concentration, in agreement with free carrier effects, but saturates for wavelengths longer than about 20 mum. As compared to silicon, the attenuation increases with the Ge fraction in the alloy. Terahertz reflectance data has been analyzed to study the doping dependent plasma-edge frequency, which may play an important role for the design of emitters, detectors, and plasmon waveguides. The best fitting of the experimental data with Drude theory has been used to extract the hole scattering relaxation time in doped silicon. The results have been utilized to explain the doping-dependent attenuation characteristics of the THz radiation. (C) 2004 American Institute of Physics.

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Physics, Applied
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