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Colossal and tunable dielectric tunability in domain-engineered barium strontium titanate
Journal article   Open access   Peer reviewed

Colossal and tunable dielectric tunability in domain-engineered barium strontium titanate

Dongfang Chen, Sergey Nisnevich, Liyan Wu, Zongquan Gu, John Carroll, Yizhe Jiang, Cedric J G Meyers, Kathleen Coleman, Brendan M Hanrahan, Lane W Martin, …
Nature communications, v 16(1), 8486
26 Sep 2025
PMID: 41006300
url
https://doi.org/10.1038/s41467-025-63449-4View
Published, Version of Record (VoR)CC BY-NC-ND V4.0 Open

Abstract

Realization of tunable materials that are multifunctional and maintain high performance in dynamically changing environments is a fundamental goal of science and engineering. Tunable dielectrics form the basis of a wide variety of communication and sensing devices and require breakthrough performance improvement to enable next-generation technologies. Using phenomenological modeling, film growth, and characterization, we show that devices consisting of domain-wall-rich BaSrTiOfilms close to a polar-domain-variant phase boundary exhibit colossal dielectric tunability of 100:1 (99%) at a voltage (electric field) of ~15 V (750 kV/cm), resulting in a tunability-quality factor product figure of merit that rises to nearly 10, two orders of magnitude higher than the best previous reported values. Remarkably, varying the amplitude of alternating-current bias enables modulation of this tunability by 50%, owing to domain-wall motion. These results suggest that domain engineering is a powerful approach for achieving excellent modulation of functional properties in ferroelectric films.

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Web of Science research areas
Physics, Applied
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