Journal article
Composition analysis of single semiconductor nanowires using pulsed-laser atom probe tomography
Applied physics. A, Materials science & processing, v 85(3), pp 271-275
01 Nov 2006
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Abstract
We report the composition analysis of single InAs and Si semiconductor nanowires using pulsed-laser atom probe tomography. The experimental conditions and sample geometries needed to realize 3-D composition mapping are described in detail. InAs mass spectra obtained using voltage pulses and laser pulses are compared, and are found to be superior for pulsed-laser evaporation. The ability to analyze intrinsic Si nanowires using pulsed laser evaporation is demonstrated. No peaks associated with the gold catalyst used were found in the InAs or the Si nanowire mass spectra.
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Details
- Title
- Composition analysis of single semiconductor nanowires using pulsed-laser atom probe tomography
- Creators
- D. E. Perea - Northwestern UniversityJ. L. Lensch - Northwestern UniversityS. J. May - Northwestern UniversityB. W. Wessels - Northwestern UniversityL. J. Lauhon - Northwestern University
- Publication Details
- Applied physics. A, Materials science & processing, v 85(3), pp 271-275
- Publisher
- Springer Nature
- Number of pages
- 5
- Resource Type
- Journal article
- Language
- English
- Academic Unit
- Materials Science and Engineering
- Web of Science ID
- WOS:000241354900009
- Scopus ID
- 2-s2.0-33750161065
- Other Identifier
- 991021934115304721
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InCites Highlights
Data related to this publication, from InCites Benchmarking & Analytics tool:
- Web of Science research areas
- Materials Science, Multidisciplinary
- Physics, Applied