Journal article
Computational modeling of domain wall interactions with dislocations in ferroelectric crystals
International journal of solids and structures, v 46(6), pp 1491-1498
2009
Featured in Collection : UN Sustainable Development Goals @ Drexel
Abstract
This paper provides a theoretical and numerical framework to investigate the interactions between domain walls and arrays of dislocations in ferroelectric single crystals. A phase-field approach is implemented in a non-linear finite element method to determine equilibrium solutions for the coupled electromechanical interactions between a domain wall and a dislocation array. The numerical simulations demonstrate the effect of the relative size and orientation of dislocations on 180° and 90° domain wall configurations. In addition, results for the pinning strength of dislocations in the case that domain walls move due the application of external electric field and shear stress are computed. The presented numerical results are compared with the findings reported for charged defects and it is shown that non-charged defects, such as dislocations, can also interact strongly with domain walls, and therefore affect the ferroelectric material behavior.
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Details
- Title
- Computational modeling of domain wall interactions with dislocations in ferroelectric crystals
- Creators
- Antonios KontsosChad M Landis
- Publication Details
- International journal of solids and structures, v 46(6), pp 1491-1498
- Publisher
- Elsevier
- Resource Type
- Journal article
- Language
- English
- Academic Unit
- Mechanical Engineering and Mechanics
- Web of Science ID
- WOS:000264047700020
- Scopus ID
- 2-s2.0-59349102797
- Other Identifier
- 991014878439404721
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- Web of Science research areas
- Mechanics