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Journal article
Controlling Tc of iridium films using the proximity effect
Journal of applied physics, v 128(15)
21 Oct 2020
Abstract
A superconducting Transition-Edge Sensor (TES) with low-
T
c is essential in high resolution calorimetric detection. With the motivation of developing sensitive calorimeters for applications in cryogenic neutrinoless double beta decay searches, we have been investigating methods to reduce the
T
c of an Ir film down to 20 mK. Utilizing the proximity effect between a superconductor and a normal metal, we found two room temperature fabrication recipes for making Ir-based low-
T
c films. In the first approach, an Ir film sandwiched between two Au films, a Au/Ir/Au trilayer, has a tunable
T
c in the range of 20–100 mK depending on the relative thicknesses. In the second approach, a paramagnetic Pt thin film is used to create the Ir/Pt bilayer with a tunable
T
c in the same range. We present a detailed study of fabrication and characterization of Ir-based low-
T
c films and compare the experimental results to the theoretical models. We show that Ir-based films with a predictable and reproducible critical temperature can be consistently fabricated for use in large scale detector applications.
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Details
- Title
- Controlling Tc of iridium films using the proximity effect
- Creators
- R. Hennings-Yeomans - 9Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USAC. L. Chang - 9Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USAJ. Ding - Materials Science Division, Argonne National LaboratoryA. Drobizhev - 9Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USAB. K. Fujikawa - Nuclear Science Division, Lawrence Berkeley National LaboratoryS. Han - Department of Physics, University of CaliforniaG. Karapetrov - Drexel UniversityYu. G. Kolomensky - 9Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USAV. Novosad - 9Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USAT. O’Donnell - 9Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USAJ. L. Ouellet - 9Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USAJ. Pearson - Materials Science Division, Argonne National LaboratoryT. Polakovic - 9Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USAD. Reggio - Department of Physics, University of CaliforniaB. Schmidt - Nuclear Science Division, Lawrence Berkeley National LaboratoryB. Sheff - Department of Physics, University of CaliforniaV. Singh - Department of Physics, University of CaliforniaR. J. Smith - Department of Physics, University of CaliforniaG. Wang - High Energy Physics Division, Argonne National LaboratoryB. Welliver - Nuclear Science Division, Lawrence Berkeley National LaboratoryV. G. Yefremenko - High Energy Physics Division, Argonne National LaboratoryJ. Zhang - Argonne National LaboratoryLawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Publication Details
- Journal of applied physics, v 128(15)
- Publisher
- American Institute of Physics (AIP)
- Number of pages
- 7
- Grant note
- DE-FG02-08ER41551 / U.S. Department of Energy (https://doi.org/10.13039/100000015) PHY-0902171 / National Science Foundation (https://doi.org/10.13039/100000001) DE-AC02-06CH11357 / U.S. Department of Energy (https://doi.org/10.13039/100000015) DE-AC02-05CH11231 / U.S. Department of Energy (https://doi.org/10.13039/100000015) PHY-1314881 / National Science Foundation (https://doi.org/10.13039/100000001)
- Resource Type
- Journal article
- Language
- English
- Academic Unit
- Physics
- Web of Science ID
- WOS:000584679800001
- Scopus ID
- 2-s2.0-85094626195
- Other Identifier
- 991019168248704721
InCites Highlights
Data related to this publication, from InCites Benchmarking & Analytics tool:
- Collaboration types
- Domestic collaboration
- Web of Science research areas
- Physics, Applied